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FDP6670S/FDB6670S
September 2001
FDP6670S/FDB6670S
30V N-Channel PowerTrench(R) SyncFET TM
General Description
This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDP6670S includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology. The performance of the FDP6670S/FDB6670S as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDP6670A/FDB6670A in parallel with a Schottky diode.
Features
* 31 A, 30 V. RDS(ON) = 8.5 m @ VGS = 10 V RDS(ON) = 12.5 m @ VGS = 4.5 V * Includes SyncFET Schottky body diode * Low gate charge (23nC typical) * High performance trench technology for extremely low RDS(ON) and fast switching * High power and current handling capability
D
D
G
G D TO-220 S
FDP Series
G
S
TO-263AB
FDB Series
S
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG TL Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
T A =25 oC unless otherwise noted
Parameter
Ratings
30 20
(Note 1) (Note 1)
Units
V V A W W/C C C
62 150 62.5 0.5 -55 to +150 275
Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
Thermal Characteristics
RJC RJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 2.1 62.5 C/W C/W
Package Marking and Ordering Information
Device Marking FDB6670S FDP6670S Device FDB6670S FDP6670S Reel Size 13'' Tube Tape width 24mm n/a Quantity 800 units 45
(c)2001 Fairchild Semiconductor Corporation
FDP6670S/FDB6670S Rev E(W)
FDP6670S/FDB6670S
Electrical Characteristics
Symbol
W DSS IAR
T A = 25C unless otherwise noted
Parameter
(Note 1)
Test Conditions
VDD = 25 V, ID = 16.5 A
Min
Typ
Max Units
285 16.5 mJ A
Drain-Source Avalanche Ratings
Single Pulse Drain-Source Avalanche Energy
Maximum Drain-Source Avalanche Current
Off Characteristics
BVDSS BVDSS TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse
(Note 2)
VGS = 0 V,
ID = 1mA
30 24 500 100 -100
V mV/C A nA nA
ID = 26mA, Referenced to 25C VDS = 24 V, VGS = 20 V, VGS = 0 V VDS = 0 V
VGS = -20 V, VDS = 0 V
On Characteristics
VGS(th) VGS(th) TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance
VDS = VGS,
ID = 1mA
1
2.2 -4.5 5 8 10
3
V mV/C
ID = 26mA, Referenced to 25C VGS = 10 V, ID = 31 A VGS = 4.5 V, ID = 26.5 A VGS=10 V, ID =31 A, TJ=125C VGS = 10 V, VDS = 10 V, VDS = 10 V ID = 31 A 60
8.5 12.5 19
m
ID(on) gFS
A 69 S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VDS = 15 V, f = 1.0 MHz
V GS = 0 V,
2639 737 222
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDS = 15 V, VGS = 10 V,
ID = 1 A, RGEN = 6
13 10 39 35
24 21 62 56 32
ns ns ns ns nC nC nC
VDS = 15 V, VGS = 5 V
ID = 31 A,
23 9 8
Drain-Source Diode Characteristics
VSD trr Qrr Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = 3.5 A VGS = 0 V, IS = 7 A IF = 3.5 A, diF/dt = 300 A/s
(Note 1) (Note 1)
0.39 0.48 32 56
0.7 0.9
V nS nC
(Note 2)
Notes: 1. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 2. See "SyncFET Schottky body diode characteristics" below.
FDP6670S/FDB6670S Rev E (W)
FDP6670S/FDB6670S
Typical Characteristics
150
2.2
5.0V
R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
VGS = 10V
120 I D, DRAIN CURRENT (A)
6.0V
2
VGS = 4.0V
4.5V
90
1.8 1.6 1.4 1.2 1 0.8
4.5V 5.0V 6.0V 7.0V 8.0V 10V
60
4.0V
30
3.5V
0 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) 5
0
30
60 90 I D, DRAIN CURRENT (A)
120
150
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.027 R DS(ON), ON-RESISTANCE (OHM)
1.6
ID = 31A VGS = 10V
R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.4
ID = 15.5A 0.022
0.017
1.2
TA = 125 C 0.012 TA = 25 C 0.007
o
o
1
0.8
0.002 2
0.6 -50 -25 0 25 50 75 100 125
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with Temperature.
80 VDS = 5V ID , DRAIN CURRENT (A) 60 TA = -55 C 25 C 125 C
o o
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
10 I S, REVERSE DRAIN CURRENT (A)
o
VGS = 0V
TA = 125 C 1 25 C 0.1 -55 C
o o
o
40
20
0 2 2.5 3 3.5 4 VGS, GATE TO SOURCE VOLTAGE (V) 4.5
0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 VSD , BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDP6670S/FDB6670S Rev E (W)
FDP6670S/FDB6670S
Typical Characteristics
(continued)
10 VGS, GATE-SOURCE VOLTAGE (V)
ID = 31A VDS = 10V 15V
3600 f = 1MHz VGS = 0 V 3000 20V CAPACITANCE (pF) 2400 1800 1200 600 CRSS 0 COSS C ISS
8
6
4
2
0 0 10 20 30 40 50 Qg, GATE CHARGE (nC)
0
5
10
15
20
25
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
1000
P(pk), PEAK TRANSIENT POWER (W) 1000
Figure 8. Capacitance Characteristics.
I D, DRAIN CURRENT (A)
10us RDS(ON) LIMIT 100s 1ms 10ms
800
SINGLE PULSE RJC = 2.1C/W T A = 25C
100
600
10
VGS = 10V SINGLE PULSE o RJC = 2.1 C/W o TA = 25 C
100ms DC
400
200
1 0.1 1 10 VDS , DRAIN-SOURCE VOLTAGE (V) 100
0 0.0001
0.001
0.01 t1 , TIME (sec)
0.1
1
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5
R J C(t) = r(t) * R J C R J C = 2.1 C/W
0.2
0.1
0.1 0.05 0.02 0.01 SINGLE PULSE
P(pk t1 t2 T J - Tc = P * RJ C(t) Duty Cycle, D = t1 / t2
0.01 0.00001
0.0001
0.001 t 1, TIME (sec)
0.01
0.1
1
Figure 11. Transient Thermal Response Curve.
FDP6670S/FDB6670S Rev E (W)
FDP6670S/FDB6670S
Typical Characteristics
(continued)
SyncFET Schottky Body Diode Characteristics
Fairchild's SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 FDP6670S. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device.
Figure 14. SyncFET diode reverse leakage versus drain-source voltage and temperature.
0.01 TA = 100 C
o
IDSS, REVERSE LEAKAGE CURRENT (A)
CURRENT: 0.8A/div
0.001
0.0001 TA = 25 C
o
TIME: 12.5ns/div
0.00001
Figure 12. FDP6670S SyncFET body diode reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDP6670A).
0
10
20
30
VDS, REVERSE VOLTAGE (V)
CURRENT: 0.8A/div
TIME: 12.5ns/div
Figure 13. Non-SyncFET (FDP6670A) body diode reverse recovery characteristic.
FDP6670S/FDB6670S Rev E (W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
DISCLAIMER
FAST (R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM
OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench (R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER (R)
SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET (R)
VCXTM
STAR*POWER is used under license
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. H4

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